central semiconductor corp. tm 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com process CP712 power transistor pnp - amp/switch transistor chip princip al device types czt7120 geometry process details r1 (1-august 2002) backside collector process epitaxial planar die size 75 x 75 mils die thickness 9.0 mils base bonding pad area 17 x 12 mils emitter bonding pad area 31 x 12 mils top side metalization al - 30,000? back side metalization ti/ni/ag - 11,300 ? gross die per 4 inch w afer 1,960
central semiconductor corp. tm the typical electrical characteristics data for this chip is currently being revised. for the latest updated data for this chip process, please visit our website at: www .centralsemi.com/chip process CP712 typical electrical characteristics r1 (1-august 2002) 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com
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